Metalorganic VPE of InGaAs on InP
- 1 January 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (1R) , 203-204
- https://doi.org/10.1143/jjap.21.203
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Growth of Ga 0.47 In 0.53 As on InP by low-pressure m.o. c.v.d.Electronics Letters, 1980
- The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’SJournal of Electronic Materials, 1980
- The organometallic VPE growth of GaAs1−ySby using trimethylantimony and Ga1−xInxAs using trimethylarsenicJournal of Electronic Materials, 1980
- Growth and Properties of Heteroepitaxial GaInAs Alloys on GaAs Substrates Using Trimethylgallium, Triethylindium, and ArsineJournal of the Electrochemical Society, 1975