LPE of InP and InGaAsP on InP substrates; A verification of the diffusion limited growth model
- 1 April 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 74 (3) , 625-634
- https://doi.org/10.1016/0022-0248(86)90209-5
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- The single crystal growth and characterization of indium phosphideJournal of Crystal Growth, 1984
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsPJournal of Crystal Growth, 1982
- Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growthJournal of Electronic Materials, 1981
- Variation of the thickness and composition of lpe InGaAsP, InGaAs, and InP layers grown from a finite melt by the step-cooling techniqueJournal of Electronic Materials, 1981
- Prevention of InP surface decomposition in liquid phase epitaxial growthApplied Physics Letters, 1980
- Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniquesJournal of Electronic Materials, 1980
- The influence of LPE growth techniques on the alloy composition of InGaAsPApplied Physics Letters, 1979
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Orientation effects in the LPE growth of GaInAsP quaternary alloysApplied Physics Letters, 1978