Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth
- 1 January 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (1) , 255-285
- https://doi.org/10.1007/bf02654912
Abstract
No abstract availableKeywords
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