Orientation effects in the LPE growth of GaInAsP quaternary alloys
- 1 September 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (5) , 449-451
- https://doi.org/10.1063/1.90374
Abstract
It was found that the liquidus composition determined by the saturation technique for the (100) ‐oriented InP source crystal is different from that for the (111) B‐oriented InP source crystal in the LPE growth of GaInAsP alloys. The lattice‐matching conditions in GaInAsP LPE growth using the liquidus data are also influenced by the substrate orientation.This publication has 14 references indexed in Scilit:
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