Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP
- 28 February 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (3) , 547-556
- https://doi.org/10.1016/0022-0248(82)90038-0
Abstract
No abstract availableKeywords
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