The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growth
- 28 February 1969
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 5 (1) , 9-12
- https://doi.org/10.1016/0022-0248(69)90070-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967
- A MATHEMATICAL ANALYSIS OF SOLUTE REDISTRIBUTION DURING SOLIDIFICATIONCanadian Journal of Physics, 1955
- On the Distribution of Impurity in Crystals Grown from Impure Unstirred MeltsProceedings of the Physical Society. Section B, 1955
- Solute Redistribution by RecrystallizationJournal of Applied Physics, 1954
- The redistribution of solute atoms during the solidification of metalsActa Metallurgica, 1953