Epitaxial growth of GaAs from thin Ga solution

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Abstract
Thin GaAs layers are grown by liquid‐phase epitaxy from thin Ga solutions (0.25–10 mm) using a horizontal sliding boat. The thickness of the GaAs layers is compared with theoretical values which were calculated assuming that the growth process is diffusion controlled. Numerical calculations are done on the growth rate, layer thickness, and As concentration in the Ga solution assuming a critical supercooling of 6 °C obtained by an experiment. The experimental values agreed well with the calculated values. It was found that the thickness of the GaAs epitaxial layer could be controlled by the following five growth parameters: initial temperature, initial supercooling, cooling rate, solution thickness, and growth duration.