A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in Ga
- 30 September 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 15 (4) , 275-280
- https://doi.org/10.1016/0022-0248(72)90022-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurementsJournal of Materials Science, 1971
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- Liquid-phase epitaxial growth of gallium arsenide under transient thermal conditionsJournal of Crystal Growth, 1970
- The temperature distribution in pulled germanium crystals during growthSolid-State Electronics, 1964