Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet
- 22 August 1973
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 20 (1) , 13-23
- https://doi.org/10.1016/0022-0248(73)90031-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in GaJournal of Crystal Growth, 1972
- The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solutionJournal of Crystal Growth, 1972
- Activity Coefficients for a Regular Multicomponent SolutionJournal of the Electrochemical Society, 1972
- Growth of High-Quality Garnet Thin Films from Supercooled MeltsApplied Physics Letters, 1971
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- A new technique for liquid phase epitaxyJournal of Crystal Growth, 1970
- The Ga+In+P systemThe Journal of Chemical Thermodynamics, 1970
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- On the growth rate of crystals from solutionJournal of Crystal Growth, 1968
- Theoretical analysis of requirements for crystal growth from solutionJournal of Crystal Growth, 1968