The single crystal growth and characterization of indium phosphide
- 1 March 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (2) , 317-326
- https://doi.org/10.1016/0022-0248(84)90214-8
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A Study of Inclusions in Indium PhosphideJournal of the Electrochemical Society, 1982
- Liquid-encapsulated Czochralski growth of InP crystalsJournal of Crystal Growth, 1981
- Dislocation clusters in Czochralski-grown single crystal indium phosphideJournal of Crystal Growth, 1981
- The characterization of highly-zinc-doped InP crystalsApplied Physics Letters, 1979
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Preparation and properties of InAs1-xPx AlloysJournal of Physics and Chemistry of Solids, 1971
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Photometric Determination of Sulfur in Metals and AlloysAnalytical Chemistry, 1949