Preparation and properties of InAs1-xPx Alloys
- 4 January 1971
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 32 (11) , 2613-IN1
- https://doi.org/10.1016/s0022-3697(71)80107-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
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- Deposition of Epitaxial InAs[sub x]P[sub (1−x)] on GaAs and GaP SubstratesJournal of the Electrochemical Society, 1970
- The Orientation Dependence of Epitaxial InAs[sub x]P[sub (1−x)] on GaAsJournal of the Electrochemical Society, 1970
- Preparation and Optical Properties of InAs1−xPx AlloysJournal of Applied Physics, 1969
- The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1969
- Liquid encapsulation techniques: The use of an inert liquid in suppressing dissociation during the melt-growth of InAs and GaAs crystalsJournal of Physics and Chemistry of Solids, 1965
- A Technique for Pulling Single Crystals of Volatile MaterialsJournal of Applied Physics, 1962
- Notizen: Herstellung von InAs- und GaAs-EinkristallenZeitschrift für Naturforschung A, 1956