Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cells
- 1 January 1986
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (1) , 37-40
- https://doi.org/10.1007/bf02649948
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphineApplied Physics Letters, 1983
- Electron Hall mobility in GaxIn1−xAsyP1−y calculated with two-longitudinal-optical-phonon modelApplied Physics Letters, 1981
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- Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and PJournal of the Electrochemical Society, 1980
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978
- Electronic Structures of Semiconductor AlloysPhysical Review B, 1970