Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphine
- 15 February 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (4) , 383-385
- https://doi.org/10.1063/1.93947
Abstract
InP was grown by molecular beam epitaxy on InP(100) substrates using In and phosphorus cracked from PH3. The dependence of the electrical and optical properties of the films on the substrate and cracking furnace temperature is discussed. One film had 40% the photoluminescence intensity of that from an InP bulk standard, an unintentional background-doping concentration of 1×1016 cm−3, and a mobility of 12 250 cm2/V at 77 °K. The lowest unintentional background doping concentration obtained was 2.1×1015 cm−3 at 77 °K. Surface morphology was excellent for a substrate temperature of 400 °C.Keywords
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