Homoepitaxial molecular beam growth of InP on thermally cleaned {100} oriented substrates
- 1 June 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (11) , 905-907
- https://doi.org/10.1063/1.92176
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Substrate temperature limits for epitaxy of InP by MBEApplied Physics Letters, 1979
- Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxyApplied Physics Letters, 1979
- Tin-doping effects in GaAs films grown by molecular beam epitaxyJournal of Applied Physics, 1978
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Molecular Beam Epitaxial Growth of InPJournal of the Electrochemical Society, 1977
- Electron Transport in InSb, InAs, and InPPhysical Review B, 1971