Study of surface recombination in GaAs and InP by picosecond optical techniques
- 1 March 1980
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (3) , 1603-1604
- https://doi.org/10.1063/1.327816
Abstract
We report results of measurements for surface recombination velocity in GaAs and InP under varying material conditions. The experimental method permits direct observation of the time-resolved decay of excess electron-hole pairs near a semiconductor surface.This publication has 3 references indexed in Scilit:
- Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratingsApplied Physics Letters, 1978
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- GaAs surface chemistry – a reviewC R C Critical Reviews in Solid State Sciences, 1975