Thermal stability of GaN on (1 1 1) Si substrate
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 178-182
- https://doi.org/10.1016/s0022-0248(98)00223-1
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 3 references indexed in Scilit:
- Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon SubstratesMRS Proceedings, 1995
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Growth of thin crystalline silicon layers for photovoltaic device useJournal of Crystal Growth, 1993