The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 128 (1-4) , 391-396
- https://doi.org/10.1016/0022-0248(93)90354-y
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layerJournal of Crystal Growth, 1991
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1988
- Aluminum Nitride Epitaxially Grown on Silicon: Orientation RelationshipsJapanese Journal of Applied Physics, 1981
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971