Thresholds of impact ionization in semiconductors
- 15 October 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (8) , 3554-3561
- https://doi.org/10.1063/1.351434
Abstract
Using a first‐principles approach to the ionization rate, we re‐examine some of the prejudices concerning impact ionization and offer a new view of the role of thresholds. We also discuss trends of ionization coefficients related to the energy band structure for silicon and a number of III‐V compounds.This publication has 19 references indexed in Scilit:
- Soft-threshold lucky drift theory of impact ionisation in semiconductorsSemiconductor Science and Technology, 1987
- A lucky drift model, including a soft threshold energy, fitted to experimental measurements of ionization coefficientsSolid-State Electronics, 1987
- High field transport in GaAs, InP and InAsSolid-State Electronics, 1984
- Impact ionization of electrons in silicon (steady state)Journal of Applied Physics, 1983
- Lucky-drift mechanism for impact ionisation in semiconductorsJournal of Physics C: Solid State Physics, 1983
- Band-structure-dependent transport and impact ionization in GaAsPhysical Review B, 1981
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961