Molecular beam epitaxial growth of a GaAs layer free from antiphase domains on an exactly (100)-oriented Si substrate preheated at 1000°C
- 1 June 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 83 (3) , 431-436
- https://doi.org/10.1016/0022-0248(87)90306-x
Abstract
No abstract availableKeywords
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