Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L391-393
- https://doi.org/10.1143/jjap.24.l391
Abstract
Good surface morphological single domain GaAs films were successfully grown on a whole area of 2-inch Si(100) substrates by molecular beam epitaxy (MBE). Si substrates were first thermally cleaned at 850°C, 100 Å GaAs buffer layers were then grown at low substrate temperatures and, finally, 1.5 µm GaAs layers were grown at 600°C. It was found that the first thermal cleaning of Si is important in growing single domain GaAs and the growth temperatures of the buffer layer had to be low to get a good morphological surface.Keywords
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