Infrared photodetection using a-Si:H photodiode
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (3) , 412-414
- https://doi.org/10.1109/68.275503
Abstract
It is experimentally demonstrated for the first time that an a-Si:H photodiode with reach-through structure can detect infrared light of 1.31 /spl mu/m and 1.55 /spl mu/m. A maximum gain-quantum efficiency product of 0.58 is obtained at a reverse bias of /spl minus/10 V under 100 /spl mu/W illumination at 1.31 /spl mu/m. This value of gain-quantum efficiency product is comparable to the quantum efficiency of a non-gain-enhanced a-Si:H pin photodiode at visible wavelengths.Keywords
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