Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic Positrons
- 11 July 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 61 (2) , 187-190
- https://doi.org/10.1103/physrevlett.61.187
Abstract
Positrons implanted with varying energies (0-20 keV) have been used to study silicon epilayers grown by molecular-beam epitaxy on Si(100) substrates. Defects at the initial growth interface and throughout the overlayer have been observed and depth profiled. In addition, field-driven positron drift observed in some of the epilayers is shown to be consistent with estimated concentrations of (active) interfacial impurities. The study demonstrates that positrons can be used nondestructively to profile structural defects and electric fileds in thin films and at interfaces.This publication has 19 references indexed in Scilit:
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