UV ozone cleaning of silicon substrates in silicon molecular beam epitaxy
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1073-1075
- https://doi.org/10.1063/1.95019
Abstract
This letter reports UV ozone cleaning of Si substrates for obtaining defect-free molecular beam epitaxial films by low-temperature in vacuum preheating. By using UV ozone cleaning, the high temperatures above 1200 °C required for removing surface carbon in the conventional method can be significantly lowered to below 1000 °C, since the UV ozone cleaning functions to remove carbon.Keywords
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