Relationship between measured and intrinsic transconductances of FET's

Publisher Website

1 February 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (2) , 448-450
https://doi.org/10.1109/t-ed.1987.22942

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon
IEEE Electron Device Letters, 1985
Experimental derivation of the source and drain resistance of MOS transistors
IEEE Transactions on Electron Devices, 1980