Experimental derivation of the source and drain resistance of MOS transistors
- 1 September 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (9) , 1846-1848
- https://doi.org/10.1109/t-ed.1980.20116
Abstract
A new method for experimentally deriving the source-and-drain resistance of MOS transistors is presented along with experimental results verifying its accuracy. The method also yields the mobility reduction with high gate-oxide field. The measurements are done on two (or more) MOS transistors which are identical except that their gate lengths differ by a known amount.Keywords
This publication has 2 references indexed in Scilit:
- Characterization of the electron mobility in the inverted Si surfacePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972