An accurate large-signal MOS transistor model for use in computer-aided design
- 1 May 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 19 (5) , 681-690
- https://doi.org/10.1109/t-ed.1972.17474
Abstract
Some MOS transistor models for computer-aided design, each having a given accuracy and complexity, are presented. These models apply before saturation and in the saturation region. Before saturation, the proposed theory takes into account the behavior of mobility versus gate-channel and drain-source biases. In the saturation region the effect of mobile carriers on the drain-channel space-charge layer in an approximate two-dimensional analysis is taken into account. This model has been checked for dc characteristicsI_{D} (V_{DS})and different channel lengths, dynamic resistances in the saturation region, transfer characteristics of various inverters, and dynamic response of these circuits. The accuracy is within 5 percent.Keywords
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