Driftgeschwindigkeitssättigung bei mos-feldeffekttransistoren

This publication has 8 references indexed in Scilit:

• Conductance of MOS transistors in saturation
  IEEE Transactions on Electron Devices, 1969
• Correlation of experiments with a two-section-model theory of the saturation drain conductance of MOS transistors
  Solid-State Electronics, 1968
• Berechnung des unbeweglichen Anteiles der Raumladung im Halbleiter einer MOS-Struktur
  Solid-State Electronics, 1968
• Temperature dependence of the saturation current of MOST's
  IEEE Transactions on Electron Devices, 1968
• The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistors
  IEEE Transactions on Electron Devices, 1966
• Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)
  IEEE Transactions on Electron Devices, 1965
• Design theory of a surface field-effect transistor
  Solid-State Electronics, 1964
• Mobility of Holes and Electrons in High Electric Fields
  Physical Review B, 1953