Growth of diamond particles on sharpened silicon tips for field emission
- 31 July 1996
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 5 (9) , 938-942
- https://doi.org/10.1016/0925-9635(96)00524-9
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Field emission characteristics of diamond coated silicon field emittersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Microstructure and field emission of diamond particles on silicon tipsApplied Surface Science, 1995
- Temperature dependence of growth rate for diamonds grown using a hot filament assisted chemical vapor deposition method at low substrate temperaturesApplied Physics Letters, 1994
- Growth of diamond particles on sharpened silicon tipsMaterials Letters, 1993
- Nanometric tips for scanning probe devicesApplied Surface Science, 1993
- Ultrasharp tips for field emission applications prepared by the vapor–liquid–solid growth techniqueJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- In situ diamond growth rate measurement using emission interferometryApplied Physics Letters, 1992
- Formation of silicon tips with <1 nm radiusApplied Physics Letters, 1990
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964