Characterization of Dynamic Behaviour of Metal-Semiconductor-Metal Photodetectors by Correlation Technique
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S)
- https://doi.org/10.1143/jjap.33.844
Abstract
The frequency response, linearity, and sensitivity of metal-semiconductor-metal (MSM) photodetectors are investigated. A new measurement technique is presented for examination of the dominant effects on current transport. The technique is based on optical excitation of a device by subsequent pulses of varying delay and on correlation of the pulse responses. In combination with time domain measurements an efficient technique for material and device optimization is attained. Characterization of the MSM-photodetectors results in a short risetime (800 fs) and pulse width (9 ps) and excellent linearity using n-type epitaxial layers. In contrast to semiinsulating layers no pulse tails are observed.Keywords
This publication has 4 references indexed in Scilit:
- Metal-semiconductor-metal photodetector with integrated Fabry–Perot resonator for wavelength demultiplexing high bandwidth receiversApplied Physics Letters, 1993
- Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAsApplied Physics Letters, 1992
- Fabrication of sub-50 nm finger spacing and width high-speed metal–semiconductor–metal photodetectors using high-resolution electron beam lithography and molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifierIEEE Electron Device Letters, 1984