Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs
- 3 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 627-629
- https://doi.org/10.1063/1.106574
Abstract
GaAs metal‐semiconductor‐metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 °C) have been investigated in the time domain by electro‐optic sampling. It could be shown that these diodes have a faster response, a considerably reduced long time tail, and can be used at larger bias than comparable diodes produced on GaAs grown at 700 °C. Temperature‐dependent measurements show that the tail can be described by hopping conductivity and disappears below 50 K.Keywords
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