A New Fault Detection Technique for IGBT Based on Gate Voltage Monitoring

Abstract
In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of a gate voltage signal measurement in a fault free and faulty case is presented to validate proposed technique.

This publication has 19 references indexed in Scilit: