Optimization of Magnetic Parameters in Thin Films DRO Storage Elements

Publisher Website
Google Scholar
Abstract
The digit current margins of a DRO magnetic film memory are determined by the disturb and writing or restoring thresholds. In an actual memory these thresholds will vary with both the film parameters and the drive line configuration. The effect of the magnetic parameters of the storage elements on these thresholds is determined by measuring the digit current margins of storage element arrays of varied magnetic parameters in a test apparatus simulating the memory operations and drive line configuration. A figure of merit calculated from these margin measurements is introduced and is used to determine the optimum film parameter values. To illustrate the effectiveness of the technique, data obtained during the experimental determination of optimum array coercivity are presented and the resultant figure of merit is discussed. Results indicate that array coercivities of 2.5 to 2.6 Oe yield maximum digit current margins. Interpretation of results of restore current measurements in terms of skew and dispersion currents is also presented.

This publication has 2 references indexed in Scilit: