Relationship of the current-voltage characteristics to the distribution of filament resistances in electroformed MIM structures
- 1 February 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 57 (1) , 33-38
- https://doi.org/10.1016/0040-6090(79)90395-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Mechanism of electrical breakdown in SiO2 filmsJournal of Applied Physics, 1975
- A new filamentary model for voltage formed amorphous oxide filmsJournal of Non-Crystalline Solids, 1972
- Hot electron transport and emission in Au-SiO-Au thin film cathodesSolid-State Electronics, 1971
- A theory for negative resistance and memory effects in thin insulating films and its application to Au-ZnS-Au devicesJournal of Physics D: Applied Physics, 1971
- A model for filament growth and switching in amorphous oxide filmsJournal of Non-Crystalline Solids, 1970
- Étude des propriétés électriques des structures Al-Al2O3–métalPhysica Status Solidi (b), 1969
- Forming process in evaporated SiO thin filmsPhilosophical Magazine, 1967
- Potential Distribution and Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1964