Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors
- 15 May 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (10) , 4949-4954
- https://doi.org/10.1063/1.350643
Abstract
The implant isolation characteristics of highly doped n‐ and p‐type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/⧠) sheet resistances are obtained in such layers following annealing at 550–600 °C for ion doses around 1015 cm−2. The residual conductivity is still due to hopping processes with small activation (50–70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple‐implant keV energy scheme. Small geometry (2×5 μm2) HBTs with gains of 25 for highly‐doped (p=7×1019 cm−3) base layer structures have been fabricated using MeV implant isolation.This publication has 22 references indexed in Scilit:
- Selfaligned AlGaAs/GaAs HBT grown by MOMBEElectronics Letters, 1991
- Ion implantation for isolation of III-V semiconductorsMaterials Science Reports, 1990
- Implant Isolation of GaAsJournal of the Electrochemical Society, 1988
- The Effects of Proton Implant on GaAs Isolation PropertiesJournal of the Electrochemical Society, 1987
- As-implanted and redistributed annealed depth distributions, range-energy data, and shape factors for Cr implanted into crystalline GaAs and SiJournal of Applied Physics, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Proton bombardment in InPSolid-State Electronics, 1977
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- Contact Resistance and Contact ResistivityJournal of the Electrochemical Society, 1972
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969