Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor deposition
- 15 December 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (24) , 1659-1660
- https://doi.org/10.1063/1.97258
Abstract
A graded-index separate-confinement strained-layer quantum well laser with pseudomorphic Ga0.63In0.37As quantum well was grown by metalorganic chemical vapor deposition. The lasing wavelength is 0.99 μm at 300 K and the average threshold current density of broad area 146×363 μm devices is 195 A/cm2.Keywords
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