Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 731-734
- https://doi.org/10.1016/0022-3093(93)91101-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Barrier-limited transport in μc-Si and μc-Si,C thin films prepared by remote plasma-enhanced chemical-vapor depositionJournal of Vacuum Science & Technology A, 1992
- High-performance poly-Si TFTs with ECR-plasma hydrogen passivationIEEE Transactions on Electron Devices, 1989
- High performance low-temperature poly-Si n-channel TFTs for LCDIEEE Transactions on Electron Devices, 1989