High-performance poly-Si TFTs with ECR-plasma hydrogen passivation

This publication has 22 references indexed in Scilit:

• Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure
  IEEE Transactions on Electron Devices, 1988
• Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source
  IEEE Electron Device Letters, 1984
• RF Recrystallization of Polycrystalline Silicon on Fused Silica for MOSFET Devices
  Journal of the Electrochemical Society, 1984
• Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
  Japanese Journal of Applied Physics, 1983
• Field effect in large grain polycrystalline silicon
  IEEE Transactions on Electron Devices, 1983
• The field effect electron mobility of laser-annealed polycrystalline silicon MOSFETs
  Solid-State Electronics, 1981
• Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate
  IEEE Electron Device Letters, 1980
• MOSFETs in laser-recrystallized poly-silicon on quartz
  IEEE Electron Device Letters, 1980
• Enhanced conductivity in plasma-hydrogenated polysilicon films
  Applied Physics Letters, 1980
• cw laser recrystallization of 〈100〉 Si on amorphous substrates
  Applied Physics Letters, 1979