The field effect electron mobility of laser-annealed polycrystalline silicon MOSFETs
- 30 November 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (11) , 1059-1066
- https://doi.org/10.1016/0038-1101(81)90135-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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