cw laser recrystallization of 〈100〉 Si on amorphous substrates
- 15 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (12) , 831-833
- https://doi.org/10.1063/1.90699
Abstract
A polycrystalline silicon film 0.55 μm thick was deposited in a low‐pressure CVD reactor on a Si3N4 substrate. Islands of various sizes (2×20 μm up to 20×160 μm) were prepared by standard photolithographic techniques. Laser annealing was then performed under conditions which are known to cause an increase in grain size from ∼500 Å to long narrow crystals of 2×25 μm in a continuous polysilicon film. These same conditions were found to produce single‐crystal 〈100〉 material in the (2×20 μm) islands. However, 25×25‐μm and 20×160‐μm islands remain polycrystalline after the laser scan.Keywords
This publication has 9 references indexed in Scilit:
- cw laser anneal of polycrystalline silicon: Crystalline structure, electrical propertiesApplied Physics Letters, 1978
- Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted siliconApplied Physics Letters, 1978
- Periodic regrowth phenomena produced by laser annealing of ion-implanted siliconApplied Physics Letters, 1978
- Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiationApplied Physics Letters, 1978
- Oriented crystal growth on amorphous substrates using artificial surface-relief gratingsApplied Physics Letters, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978
- A laser-scanning apparatus for annealing of ion-implantation damage in semiconductorsApplied Physics Letters, 1978
- Laser annealing of boron-implanted siliconApplied Physics Letters, 1978
- V-1 laser fabrication of large-area arrays: Thin-film silicon isolated devices on fused Silica substratesIEEE Transactions on Electron Devices, 1974