Transport of excess carriers in silicon wafers
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1) , 51-59
- https://doi.org/10.1088/0268-1242/7/1/009
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Surface and volume decay processes in semiconductors studied by contactless transient photoconductivity measurementsApplied Physics A, 1988
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.Journal of Applied Physics, 1988
- Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocityJournal of Applied Physics, 1987
- The study of charge carrier kinetics in semiconductors by microwave conductivity measurementsJournal of Applied Physics, 1986
- Buried recombination layers with enhanced n-type conductivity for silicon power devicesPhysica B+C, 1985
- Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulsesSolid-State Electronics, 1982
- A Study on Thermally Induced Microdefects in Czochralski-Grown Silicon Crystals : Dependence on Annealing Temperature and Starting MaterialsJapanese Journal of Applied Physics, 1980
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972