Single crystal measurements and stress difference in solid pressure-transmitting media

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Abstract
Stress differences in ultra-high pressure apparatus of the tetrahedral anvil type have been measured by using the piezoresistance effect in n-type silicon. The magnitude of the stress difference is found to depend on the size and shape of the sample, and on its orientation within the tetrahedron. The observed effects are explained in terms of the differential strain between the sample and its environment during compression. Stress differences may be reduced to low values, less, similar 1 kb at a mean stress of about 40 kb, by suitable arrangement of the sample geometry. The results indicate that the stress differences arising from the use of a solid pressure-transmitting medium may be controlled so that they have a relatively small effect on semiconductor single-crystal measurements above 30 kb.