Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxy
- 2 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (14) , 1378-1379
- https://doi.org/10.1063/1.101599
Abstract
We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad‐area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540‐μm‐long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried‐heterostructure device with a 2‐μm‐wide stripe and 425‐μm‐long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 μm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.Keywords
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