Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Transient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.Keywords
This publication has 2 references indexed in Scilit:
- Double-crystal X-ray diffraction analysis of low-temperature ion implanted siliconSolid-State Electronics, 1985
- Diffusion of phosphorus during rapid thermal annealing of ion-implanted siliconApplied Physics Letters, 1984