Anisotropic Si(100) etching induced by high translational energy Cl2 molecular beams
- 13 December 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (24) , 3355-3357
- https://doi.org/10.1063/1.110143
Abstract
Si(100) has been etched by high speed Cl2 molecular beams, generated by seeding in He. The translational energy dependence for etch rates has been measured by changing the gas mixing ratio and nozzle temperature. The two methods provided the same results. A 2.1 eV energy threshold was observed at 530 °C substrate temperature. The Cl+/Cl+2 intensity ratio, directly monitored by a quadrupole mass spectrometer, was independent of the nozzle temperature. These facts indicate that the etch rate enhancement is not attributed to Cl radicals or vibrationally excited Cl2 molecules. Owing to the translational energy induced etching, anisotropic etching profiles are realized at 670 °C substrate temperature.Keywords
This publication has 8 references indexed in Scilit:
- Enhanced etching of Si(100) by neutral chlorine beams with kinetic energies up to 6 eVJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Chlorine molecular beam scattering study on Si(100)2 × 1: desorption productsApplied Surface Science, 1992
- Anisotropic Si Etching by a Supersonic Cl2 BeamMRS Proceedings, 1991
- Reactive–fast-atom beam etching of GaAs using Cl2 gasJournal of Applied Physics, 1989
- Generation of low-energy neutral beams and radiation damage of SiO2/Si by neutral bombardmentJournal of Vacuum Science & Technology B, 1989
- Anisotropic etching of polycrystalline silicon with a hot Cl2 molecular beamJournal of Applied Physics, 1988
- Hot-jet etching of Pb, GaAs, and SiJournal of Vacuum Science & Technology B, 1987
- Reaction mechanisms for the photon-enhanced etching of semiconductors: An investigation of the UV-stimulated interaction of chlorine with Si(100)Surface Science, 1986