Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow-green (λ≲5560 Å, ℏ ω≳2.23 eV)

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Abstract
Calculations of the recombination probability of an electron and hole in III‐V ternary alloys containing short‐range isoelectronic traps indicate its resonant enhancement when by varying the alloy composition, the electronic trap state is made degenerate with the direct (Γ) minimum in the conduction band. This result is consistent with observations of strong photostimulated laser operation of the N‐trap transition in In1−xGaxP (0.6≤x≤0.7) in cases for which this state occurs near and above the direct band gap. These results lead to III‐V semiconductor laser operation at wavelengths as short as or shorter than 5560 Å (2.23 eV, 77 °K), with the ultimate limit in In1−xGaxP:N being about EN ≈EΓ=2.27 eV (5470 Å).