Study of the dynamics of excited states in CdS and CuCl by transient grating techniques
- 1 August 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (8) , 1320-1327
- https://doi.org/10.1109/jqe.1986.1073109
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Picosecond spectroscopy of highly excited CdSPhysical Review B, 1985
- Surface and interface effects in a-Si:H observed by transient grating spectroscopyJournal of Non-Crystalline Solids, 1983
- Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating methodApplied Physics Letters, 1983
- Carrier dynamics in optically illuminated a-Si:HPhysica B+C, 1983
- Dispersion of the Refractive Indices and Birefringence of CdSxSe1−x Single CrystalsPhysica Status Solidi (b), 1969
- Optical Properties and Band Structure of Wurtzite-Type Crystals and RutilePhysical Review B, 1965
- Phonon Scattering in Semiconductors From Thermal Conductivity StudiesPhysical Review B, 1964
- Refractive Indexes of Single Hexagonal ZnS and CdS CrystalsJournal of the Optical Society of America, 1963
- Electron and Hole Transport in CdS CrystalsProceedings of the Physical Society, 1963
- Mass spectrometric and Knudsen-cell vaporization studies of group 2B-6B compoundsTransactions of the Faraday Society, 1963