Surface and interface effects in a-Si:H observed by transient grating spectroscopy
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 501-504
- https://doi.org/10.1016/0022-3093(83)90630-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Study of optically induced degradation of conductivity in hydrogenated amorphous silicon by transient grating methodApplied Physics Letters, 1983
- Optical absorption spectra of surface or interface states in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Properties and structure of a-SiC:H for high-efficiency a-Si solar cellJournal of Applied Physics, 1982
- Oxidation and interface states in a-Si: HPhilosophical Magazine Part B, 1981
- Thickness dependent conductivity of n-type hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980
- Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon-hydrogen alloysApplied Physics Letters, 1978