Oxidation and interface states in a-Si: H
- 1 June 1981
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (6) , 1091-1098
- https://doi.org/10.1080/01418638108222576
Abstract
In a-Si: H films with columnar growth morphology, the material between the columns reacts with air, leaving an Si–O suboxide coating on the columns of estimated thickness 5–10 Å. At the a-Si: H/oxide interface a dangling-bond density of ∼3 × 1011 cm−2 develops with time. We suggest that the oxide layer and the surface defects are characteristic of exposed surfaces of any a-Si: H film. It is emphasized that the surface defect states can have a strong influence on the electronic properties of the material.Keywords
This publication has 17 references indexed in Scilit:
- Thickness dependent conductivity of n-type hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980
- Electronic and structural properties of plasma-deposited a-Si:O:H - The story of O2Journal of Non-Crystalline Solids, 1980
- Thermalization and recombination of excess carriers in A-Si:HJournal of Non-Crystalline Solids, 1980
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Microstructure of plasma-deposited a-Si : H filmsApplied Physics Letters, 1979
- Porosity and oxidation of amorphous silicon films prepared by evaporation, sputtering and plasma-depositionSolar Energy Materials, 1979
- Electron spin resonance and hopping conductivity of a-SiOxJournal of Non-Crystalline Solids, 1979
- (Invited) Characterization of Plasma-Deposited Amorphous Si: H Thin FilmsJapanese Journal of Applied Physics, 1979
- Optically induced electron spin resonance in doped amorphous siliconSolid State Communications, 1977