Properties and structure of a-SiC:H for high-efficiency a-Si solar cell
- 1 July 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 5273-5281
- https://doi.org/10.1063/1.331363
Abstract
A series of experimental investigations on optical and optoelectronic properties of methane‐ and ethylene‐based a‐SiC:H films has been made. The chemical bonding structure of two kinds of a‐ SiC:H films has also been explored from infrared (IR) absorption structural analysis. An experimental verification for the wide gap window material in the amorphous silicon solar cell is shown on methane‐ and ethylene‐based a‐SiC:H. The methane‐based a‐SiC:H film shows one or two orders of magnitude larger photoconductivity recovery effect of doping than the ethylene‐ based one. IR absorption analysis shows that the methane‐based a‐SiC:H film is recognized as a rather ideal amorphous SiC alloy as compared with the ethylene‐based one. It has been found through these investigations that the methane‐based a‐SiC:H film is superior to the ethylene‐ based one as a window material. Utilizing the methane‐based a‐SiC:H, an 8% efficiency barrier has been broken through with an a‐SiC:H/a‐Si:H heterojunction structure.This publication has 19 references indexed in Scilit:
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