Reaction mechanisms in plasma deposition of SixC1-x:H films
- 1 January 1981
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 76 (1) , 23-34
- https://doi.org/10.1016/0040-6090(81)90062-6
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- X-ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1−xCx:H filmsJournal of Applied Physics, 1980
- Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H filmsThin Solid Films, 1980
- Reactive plasma deposited SixCyHz filmsThin Solid Films, 1979
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Photoluminescence in the amorphous system SixC1−xApplied Physics Letters, 1978
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977
- Formation de dépôts de nitrure de silicium en couche mince obtenus par réaction chimique dans une décharge R.F. Basse pressionThin Solid Films, 1976
- A Correlation of the Chemistry with the Polymerization Rate in an rf Discharge of MethaneJournal of Macromolecular Science: Part A - Chemistry, 1976
- Mass-spectrometric sampling of the ionic and neutral species present in different regions of an RF discharge in methaneInternational Journal of Mass Spectrometry and Ion Physics, 1975
- THE DECOMPOSITION OF METHANE BY LOW-ENERGY ELECTRONSCanadian Journal of Chemistry, 1960